Summary of Studies on Recorded Voltage in DIP Resistor Under Treatment with Various T-Consciousness Fields

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Mohammad Ali Taheri
Sciencefact R&D Department, Cosmointel Inc. Research Center, Ontario, Canada

Pouria Yaghoubi Ali Abad
Faculty of Electrical Engineering, Iran University of Science and Technology, Tehran, Iran

Nasrin Salimian
Independent Researcher, M.Sc. in Statistics

Farzad Ahmadkhanlou
Department of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, California, USA

Farid Semsarha
Institute of Biochemistry and Biophysics (IBB), University of Tehran, Tehran, Iran

Keywords

T-Consciousness Fields , Electrical Properties, 10kΩ DIP Resistor , Minimum Entropy, Shannon Entropy, Population Analysis, Uncertainty, Relative comparison, DIP resistor, Voltage

Abstract

This paper exclusively offers a summary and general review of the papers presented in this issue.

Abstract 67 | PDF Downloads 17

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Published
Aug 14, 2025
DOI https://doi.org/10.61450/joci.v4i17.214

Article Details

How to Cite
Taheri, M. A., Yaghoubi Ali Abad, P., Salimian, N., Ahmadkhanlou, F., & Semsarha, F. (2025). Summary of Studies on Recorded Voltage in DIP Resistor Under Treatment with Various T-Consciousness Fields. The Scientific Journal of Cosmointel, 4(17), 47–50. https://doi.org/10.61450/joci.v4i17.214
Issue
Vol. 4 No. 17 (2025): Examining the Effects of T-Consciousness Fields on the Electrical Properties of Materials
Section
T-Consciousness Scientific Papers