Examining the Impact of T-Consciousness Fields on the Overall Population of Control and Test Samples of DIP Resistors

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Mohammad Ali Taheri
Pouria Yaghoubi Ali Abad
Nasrin Salimian
Farzad Ahmadkhanlou
Farid Semsarha

Keywords

T-Consciousness Fields , Electrical Properties, 10kΩ DIP Resistor , Minimum Entropy, Shannon Entropy

Abstract

In this study, each resistor was initially measured without the application of T-Consciousness Fields, serving as an internal control. An analysis was then performed to determine the appropriate number of resistors for a stable population based on entropy calculations. As a result, a suitable population of nine resistors was selected for further investigation. These resistors were randomly chosen from the total sample and subsequently exposed to various T-Consciousness Field.  Changes in average recorded voltage, minimum entropy, and Shannon entropy were examined within both the control and treated groups. The findings indicate that the application of T-Consciousness Fields led to an increase in voltage across the resistors in the studied system.

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